document number: 94052 for technical questions within your region, please contact one of the following: www.vishay.com revision: 16-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 15 a vs-hfa15pb60pbf vishay semiconductors features ? ultrafast and ultrasoft recovery ? very low i rrm and q rr ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description vs-hfa15pb60pbf is a state of the art ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any re ctifier previously available. with basic ratings of 600 v and 15 a continuous current, the vs-hfa15pb60pbf is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to snap-off during the t b portion of recovery. the hexfre d features combine to offer designers a rectifier with lowe r noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snu bbing, component count and heatsink sizes. the hexfred vs-hfa15pb60pbf is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applicatio ns where high speed, high efficiency is needed. product summary package to-247ac modified (2 pins) i f(av) 15 a v r 600 v v f at i f 1.7 v t rr (typ.) 19 ns t j max. 150 c diode variation single die to-247ac mo d i?e d s e common cathode 2 13 anode cathode absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 600 v maximum continuous forward current i f t c = 100 c 15 a single pulse forward current i fsm 150 maximum repetitive forward current i frm 60 maximum power dissipation p d t c = 25 c 74 w t c = 100 c 29 operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94052 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 16-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa15pb60pbf vishay semiconductors hexfred ? ultrafast soft reco very diode, 15 a electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 600 - - v maximum forward voltage v fm i f = 15 a see fig. 1 -1.31.7 i f = 30 a - 1.5 2.0 i f = 15 a, t j = 125 c - 1.2 1.6 maximum reverse leakage current i rm v r = v r rated t j = 125 c, v r = 0.8 x v r rated see fig. 2 -1.010 a - 400 1000 junction capacitance c t v r = 200 v see fig. 3 - 25 50 pf series inductance l s measured lead to lead 5 mm from package body - 12 - nh dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units reverse recovery time see fig. 5, 10 t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 19 - ns t rr1 t j = 25 c i f = 15 a di f /dt = 200 a/s v r = 200 v -4260 t rr2 t j = 125 c - 74 120 peak recovery current see fig. 6 i rrm1 t j = 25 c - 4.0 6.0 a i rrm2 t j = 125 c - 6.5 10 reverse recovery charge see fig. 7 q rr1 t j = 25 c - 80 180 nc q rr2 t j = 125 c - 220 600 peak rate of fall of recovery current during t b see fig. 8 di (rec)m /dt1 t j = 25 c - 188 - a/s di (rec)m /dt2 t j = 125 c - 160 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c thermal resistance, junction to case r thjc --1.7 k/w thermal resistance, junction to ambient r thja typical socket mount - - 40 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.25 - weight -6.0- g -0.21- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-247 ac modified (jedec) hfa15pb60
document number: 94052 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 16-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa15pb60pbf hexfred ? ultrafast soft recovery diode, 15 a vishay semiconductors fig. 1 - maximum forward voltage drop vs. instantaneous forward current fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 1.0 2.4 1.2 1.4 v fm - forward voltage drop (v) i f - instantaneous forward current (a) 100 1.8 2.2 2.0 1.6 t j = 150 c t j = 125 c t j = 25 c 0.01 0.1 1 10 100 0 v r - reverse voltage (v) i r - reverse current (a) 1000 100 600 500 300 10 000 400 200 t j = 150 c t j = 125 c t j = 25 c 10 100 10 100 1000 v r - reverse voltage (v) c t - junction capacitance (pf) t j = 25 c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal response s ingle pul s e (thermal re s pon s e) 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 p dm t 2 t 1 note s : 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94052 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 16-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa15pb60pbf vishay semiconductors hexfred ? ultrafast soft reco very diode, 15 a fig. 5 - typical reverse recovery time vs. di f /dt fig. 6 - typical recovery current vs. di f /dt fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt 80 40 0 100 1000 di f /dt (a/s) t rr (ns) v r = 200 v t j = 125 c t j = 25 c 60 20 100 i f = 30 a i f = 15 a i f = 5 a 20 15 0 100 1000 di f /dt (a/s) i rr (a) v r = 200 v t j = 125 c t j = 25 c 5 10 25 i f = 30 a i f = 15 a i f = 5 a 800 0 100 1000 di f /dt (a/s) q rr (nc) 600 i f = 30 a i f = 15 a i f = 5 a v r = 200 v t j = 125 c t j = 25 c 200 400 10 000 1000 100 1000 di f /dt (a/s) di (rec)m /dt (a/s) v r = 200 v t j = 125 c t j = 25 c 100 i f = 30 a i f = 15 a i f = 5 a
document number: 94052 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 16-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa15pb60pbf hexfred ? ultrafast soft recovery diode, 15 a vishay semiconductors fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94052 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 16-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa15pb60pbf vishay semiconductors hexfred ? ultrafast soft reco very diode, 15 a ordering information table 1 - vishay semiconductors product 2 - hexfred ? family 3 - electron irradiated 4 - current rating (15 = 15 a) 5 - pb = to-247ac modified device code 5 1 3 2 4 6 7 hf vs- a 15 pb 60 pbf 6 7 - pbf = lead (pb)-free - voltage rating: (60 = 600 v) links to related documents dimensions www.vishay.com/doc?95253 part marking information www.vishay.com/doc?95255
outline dimensions www.vishay.com vishay semiconductors revision: 21-jun-11 1 document number: 95253 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera nce per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c a (6) p (datum b) p1 d1 (4) 4 e1 view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode 0.10 a c m m ? k b d m m
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